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| 50 -10V -6V -5V 30 Vds=-5V 25 20 40 -Id (A) -Id(A) 30 -4.5V 15 10 125C 20 Vgs=-4V 25C 5 0 0 1 2 3 4 5 2 2.5 3 3.5 4 4.5 5 -Vds (Volts) Fig 1: On-Region Characteristics 12 1.6 -Vgs(Volts) Figure 2: Transfer Characteristics 10 0 10 Normalized On-Resistance Vgs=-6V Vgs=-10V Id = -15A 1.4 Vgs=-20V Id = -15A 1.2 Vgs=-6V Id = -10A Rds(on) (m:) 8 Vgs=-10V 6 Vgs=-20V 4 0 5 10 15 20 25 30 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 16 Id=-15A 14 -15 1.0E+01 -12.8 1.0E+00 1.0E-01 Rds(on) (m:) 12 125C -Is (A) 125C 10 8 25C 6 4 4 8 12 16 20 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics 10 Vds=-15V Id=-15A 8 7000 6000 Ciss 6 Capacitance (pF) 5000 4000 3000 Coss 2000 1000 -Vgs (Volts) 4 2 Crss 0 0 10 40 50 60 70 80 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 30 90 0 15 20 25 -Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30 0 100.0 Rds(on) limited 100Ps 1ms 10Ps 40 Tj(max)=150C Ta=25C 30 -Id (Amps) Power (W) 10.0 10ms 0.1s 20 1.0 1s 10s Tj(max)=150C Ta=25C DC 0 0.001 10 0.1 0.1 1 10 100 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40C/W 1 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.01 -15 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse -12.8 ZTja Normalized Transient Thermal Resistance Pd Ton Single Pulse T 0.1 0.01 0.00001 0.0001 0.001 0.01 1 10 Pulse 0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 |
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